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In this paper, a distributed Bragg reflector (DBR) for a bottom reflector in 850-nm GaAs infrared light-emitting diodes (Ir-LEDs) was developed and optimized. At an 850-nm wavelength, markedly improved reflection spectra were observed from DBRs consisting of Al1-xGaxAs/AlxGa1-xAs materials. In addition, the reflection spectra of Al1-xGaxAs/AlxGa1-xAs-based DBRs was found to increase with increasing...
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