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The thermal evaporation system type (Edwards) has been used to evaporate high purity (99.9 %) silver on glass, n- and p-type silicon and porous silicon substrates at room temperature under low pressure (about 10−6 torr) for different thickness (50, 75, 100, 125 and 150 nm). Using a rapid thermal oxidation of Ag film at oxidation temperature 350 °C and different oxidation times, Ag2O thin film was...
Transparent and conducting SnO2 thin film has been produced on (quartz, ITO, silicon and porous silicon) substrates using rapid photothermal oxidation of pure Sn in air at 600 °C oxidation temperature and different oxidation time. The structural, optical, electrical properties, scan electron microscope and atomic force microscope of the prepared films were studied. The transmittance T in the visible...
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