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Single-crystalline silicon materials with large dimensions have been widely used as assemblies in plasma silicon etching machines. However, information about large-diameter low-cost preparation technology has not been sufficiently reported. In this paper, it was focused on the preparation of 400-mm silicon (100) crystal lightly doped with boron from 28-in. hot zones. Resistivity uniformity and oxygen...
Numerical analysis is an effective tool to research the industrial Czochralski (CZ) crystal growth aiming to improve crystal quality and reduce manufacturing costs. In this study, a set of global simulations were carried out to investigate the effect of crystal-crucible rotation and pulling rate on melt convection and solid–liquid (SL) interface shape. Through analyses of the simulation data, it is...
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