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Characteristic features of photoconductivity in AsxSb15Se85−x and AsxSb10Se90−x bulk glass systems have been measured and reported. Both a.c and d.c techniques have been employed for the measurements. The temperature dependence of photoconductivity has been analysed in terms of the ABFH model and both systems are found to exhibit type I photoconductivity. Photoconductivity shows a clear change...
The present paper reports the DC conductivity measurements at high electric fields in vacuum evaporated amorphous thin films of a-Se100−xSnx (x = 0, 2, 4, 6) glassy alloys. Current-voltage (I–V) characteristics have been measured at various fixed temperatures. In these samples, at low electric fields, ohmic behaviour is observed. However, at high electric fields (E ∼ 104 V/cm), non-ohmic behaviour...
In this paper we report the effect of Pb incorporation in the dielectric properties of a-Se75In25 glassy alloy. The temperature and frequency dependence of the dielectric constants and the dielectric losses in glassy Se75In25−xPbx (x = 0, 5, 10 and 15) alloys in the frequency range (1 kHz-5 MHz) and temperature range (300–340 K) have been measured. A detailed analysis shows that the dielectric...
In the present paper, we report the compensation effect on photoconductivity of thin films of Se70Te30−xCdx (x = 2, 4, 6) alloys for high field conduction. Steady state photoconductivity measurements have been made in thin films for different electric fields. The photoconduction was found to be ohmic at low fields and Poole-Frenkel type at high fields. Meyer-Neldel rule (MN rule) for the pre-exponential...
Thin films of Se85 − xTe15Znx (x = 0, 2, 4, 6 and 10) glassy alloys have been deposited onto a chemically cleaned glass substrate by thermal evaporation technique under vacuum. The analysis of transmission spectra, measured at normal incidence, in the spectral range of 400–2500 nm helped us in the optical characterization of thin films under study. From the analysis of transmission spectra, the...
The bond constraint theory (BCT) dealing with the rigidity caused by bond constraints and the long-range potential fluctuations (LRPF) arising from the defects and heterogeneities in the disordered semiconductors are important for understanding the atomic and electronic properties of amorphous semiconductors. Here, they are applied to the already commercialized GeXSb...
The present paper reports the comparative study of density of defect states (DOS) between bulk samples and thin films of glassy Se90Sb10. These glasses have been prepared by the quenching technique. Thin films of these glasses have been prepared by vacuum evaporation technique. Space-charge-limited conduction (SCLC) has been measured at different temperatures. The density of localized states near...
The effect of Ge additive on the physical and dielectric properties of Se75Te25 and Se85Te15 glassy alloys has been investigated. It is inferred that on adding Ge, the physical properties i.e., average coordination number, average number of constraints and average heat of atomization increase but lone pair electrons, fraction of floppy modes, electronegativity, degree of crosslinking and deviation...
The integral equations for DC conductivity and external conductance for the network of localised states in amorphous solids are solved by iteration method. The random free energy barriers and single polaron hopping model are used to obtain the DC conductivity $$\sigma _{\mathrm {DC}}$$ σDC and Meyer–Neldel energy $$E_{\mathrm {MN}}$$ EMN . The experimental estimates of optical band gap $$E_{\mathrm...
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