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We report on the molecular beam epitaxy growth of Au-assisted GaAs p-type-doped NW arrays on the n-type GaAs(111)B substrate and their photovoltaic properties. The samples are grown at different substrate temperature within the range from 520 to 580 °C. It is shown that the dependence of conversion efficiency on the substrate temperature has a maximum at the substrate temperature of 550 °C. For the...
In this paper, we introduce hemiellipsoid- and inverted hemiellipsoid-modified semiconductor nanowire (NW) optical structures, and present a systematic investigation on light management of the corresponding arrays based on GaAs. It is found that the modification makes well utilization of light scattering and antireflection, thus leading to excellent light confinement with limited effective thickness...
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