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Wafer-scale, conformal, two-dimensional (2D) TiO2-Ga2O3n-p heterostructures with a thickness of less than 10 nm were fabricated on the Si/SiO2 substrates by the atomic layer deposition (ALD) technique for the first time with subsequent post-deposition annealing at a temperature of 250 °C. The best deposition parameters were established. The structure and morphology of 2D TiO2-Ga2O3n-p heterostructures...
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