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The effects of bias voltage, bias time, frequency, and duty cycle on the nucleation of diamond were investigated. Pulsed duty cycles were 0.4 µs, and the frequency varied between 0 and 100 kHz. The substrates were pretreated by a direct current (dc) bias using 3 vol. % CH4 in Ar/H2 plasma. Growth and surface roughness were controlled using pulsed frequencies, with mean Ra values of 20 nm. Films were...
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