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The HgCdTe infrared detectors and test structures based on dual or multicolor HgCdTe are desirable for various applications. It is important to control both p-and n-type extrinsic doping in these photovoltaic structures. This paper addresses the issue of activating arsenic as a p-type dopant at temperatures sufficiently low that they will not compromise the integrity of p-n junctions. Midwavelength...
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