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The effect of a thin layer of SiO2 (50 nm) on the electromigration behavior of Al/ 0.8wt.%Si/0.5wt.%Cu metallization, passivated by spin-on-glass, phosphorus silicate glass and silicon nitride as part of the complementary metal oxide semiconductor technology fabrication process was studied. It is found that voids were formed along the edge of the metallization line as opposed to formation at triple...
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