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We examined the power-generation characteristics of thin-film devices using the heat dissipated from high-power light-emitting diodes. The thin-film device was fabricated around an light-emitting diode (LED) chip by electrodepositing four pairs of the 10 μm-thick Bi2Te3 and Sb2Te3 films using either the high resistive Ti seed layer or the more conductive Ti/Cu/Au seed layer. The seed layer effect...
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