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In this study, Ga/Sn co-doped single-crystal β-Zn4Sb3 were prepared by a Sn-flux method based on stoichiometric ratios of Zn4−xSb3GaxSn3 (x = 0, 0.25, 0.5, 0.6 and 0.75). The effect of Ga/Sn co-doping on the thermal stability and electrical transport properties of the obtained samples were investigated. All the prepared samples exhibit p-type conduction, and carrier concentration varies from 4.71 × 10...
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