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The mobility of electrons in vertical transport in GaAs/Ga1−yAlyAs barrier structures was investigated using geometric magnetoresistance measurements in the dark. The samples studied had Ga1−yAlyAs (0 ≤ y ≤ 0:26) linearly graded barriers between the n+-GaAs contacts and the Ga0:74Al0:26As central barrier, which contain Nw (=0, 2, 4, 7 and 10) n-doped GaAs quantum wells. The mobility was determined...
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