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The electrical properties of two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures using high temperature (HT) AlN interlayers (ITs) grown on c-plane sapphire substrate by metal organic chemical vapor deposition (MOCVD) have been investigated. It is found that the electrical properties (electron mobility and sheet carrier density) are improved compared with those in the conventional AlGaN/GaN...
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