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TAP-NDE is employed to perform an experimental study on silicon wafers of different thicknesses to determine the maximum possible resolution of TAP-NDE towards temperature sensitivity, and to demonstrate the ability to differentiate between wafers of different deposition layer thickness at temperatures up to 600°C. Temperature resolution is demonstrated for ±10°C resolution and for ±5°C resolution;...
The feasibility of Thermo-Acousto-Photonic Nondestructive Evaluation (TAP-NDE) as an alternative to current pyrometric and ellipsometric techniques to simultaneously measure temperature and thickness during single crystalline silicon wafer processing is investigated. TAP-NDE is a non-contact, non-invasive, laser-based ultrasound technique employed to profile the thermal and spatial characteristics...
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