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A method for the nondestructive contactless control of thickness of undoped autoepitaxial InAs layers on heavily-doped substrates by Fourier-Transform Infrared Spectroscopy (FTIR) is implemented. The studied layers are grown by the chloride-hydride epitaxy method in a vertical reactor. The thickness control method is based on the analysis of interference patterns observed in infrared reflectance spectra...
The dynamics of fluorine atoms distribution over the thickness of the grown anodic oxide layers and the effective surface charge on InAs crystals under these layers are investigated. Anodic oxidation is performed in an alkaline electrolyte to which a fluorochemical component in the galvanostatic mode is added at the anode current densities of 0.05 and 0.5 mA cm–2. The layer’s thickness changes by...
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