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The drift of TEOS etch rate has been observed during MERIE oxide etch for the damascene process. The etch rate typically fluctuates between 5300 Å/min and 6000 Å/min. Studies using fluorocarbon-based chemistry show a normal TEOS etch rate when the chamber wall is heavily coated with polymer deposition. On the other hand, a lower etch rate appears when the chamber has less deposition. Hysteresis behavior has been observed during the etch rate of TEOS, as well as emission intensity trends of F, CF...
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