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In this study, the reaction of NF3 gas plasma with cobalt oxide (Co3O4) film grown on the Inconel base metal surface was investigated. Experimental results showed the plasma etching rate as high as 3.36 μm/min at 350 °C under 220 W of plasma power with negative 300 DC bias voltage. AES and XPS analyses revealed that reaction product is CoF2, demonstrating that the plasma processing is a fluorination...
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