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Vanadium oxide/hexadecylamine (V2O5/HDA) sensing membrane was deposited on the glassy carbon substrate and used as the sensing layer of the extended gate H+-ion sensitive field effect transistor (EGFET) device. The structural and morphological features of V2O5/HDA were studied by X-ray diffraction, Fourier transformed-infrared spectroscopy and Scanning electronic microscopy images; and the electrochemical...
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