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Thin films of antimony doped indium oxide on glass has been developed by sol–gel dipping process. Four different Sb: In atomic ratios, 1:99, 4:96, 7:93, 10:90 were selected for the precursors. Pressure flow curve of the precursors were Newtonian which apparently developed homogeneous films baking at 500 °C in air. The EDS study restricted to the study of the films of only two Sb: In atomic ratios,...
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