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GaN nanorods have been successfully synthesized on Si (111) substrates by magnetron sputtering through ammoniating Ga2O3/Tb thin films. The influence of ammonating temperatures on microstructure, morphology and light emitting properties of GaN nanorods was ananlyzed in detail using X-ray diffraction, X-ray photoelectron spectroscopy, FT-IR spectrophotometer, scanning electron microscopy, high- resolution...
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