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The dark-current characteristics of PbSrSe thin films grown by molecular beam epitaxy on BaF2 substrates with Sr composition from 0.066 to 0.276 have been measured systematically under different temperatures from 77 K to 300 K. The carrier-transport characteristics have been explained on the basis of a grain-boundary barrier model. The barrier height is found to be strongly related to the Sr composition...
The effect of strain accumulation in the InAs/InxGa1−xAs quantum dots (QDs) system was studied in this work. We found strain in the InxGa1−xAs layer with accumulation in the QD layer. This effect resulted in a dramatic reduction of growth-mode transition thickness of the QD layer. For InAs/In0.25Ga0.75As QDs, critical thickness is measured to be as low as 1.08 ML. The experimental results in...
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