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We propose a scheme to realize polarization rotation (PR) based on SOI by using two mode converters and a phase shifter. Simulation results from 3D-FDTD show that the PR has extinction ratio (ER) larger than 20 dB and insertion loss less than 0.4 dB in an ultra-wide range from 1450 nm to 1650 nm for both TM0 and TE0. Moreover, the total length of the device is 33μm with a height of 220 nm.
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