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Recent advances and new trends in high voltage SiC based MOSFETs are analyzed. The main focus is done on design optimization strategies for reducing the on-state resistance. Gate oxide treatments for improving the interface quality resulting in a lower channel resistance are reviewed as well as solutions for lowering the JFET and bulk resistance components. The 3rd quadrant operation, short-circuit...
This work describes experimental surge current evaluation for various layout design of 1.2kV 4H-SiC JBS diodes. The silicon carbide devices working at temperatures significantly beyond to those of silicon power devices need specific reliability tests, adapted to high temperature operation and/or high power density of this new generation of power devices. Actually, it is not possible to predict the...
The limits of the current electronic solutions restrict the use in harsh environments especially in high temperature (>300 °C). SiC is a material, which allows exceeding these physical constraints. AMPERE laboratory have developed SiC integrated circuits based on lateral MESFETs. This paper presents the first steps of the development of smart integrated driver circuit dedicated to harsh environments.
This paper investigates the high-temperature thermal response of a Ni/SiC-Schottky diode with a severe degree of contact in homogeneity. Forward characteristics, visibly affected by non-uniform Schottky barrier height in the 25°C-450°C domain are very accurately reproduced using a model based on parallel conduction. Constant sensitivity is established for the analyzed sample in the entire measurement...
In this paper are described some principles and new methods underlying the temperature adjustment in an laboratory electrical furnace. Due to high thermal inertia, classical Proportional-Integral-Derivative algorithms are difficult to be implemented when a high precision temperature adjustment is required. An original software algorithm written in C language performs the temperature control function,...
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