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Vertical GaN power semiconductors promise higher power with faster switching speeds but the development of this technology has been slowed. This is due to the expense and lack of familiarity with GaN substrates. This paper will detail the functionality of HRL's cutting-edge vertical GaN transistor which is mounted onto a specially made PCB and tested. The testing consists of a static characterization...
1700V SiC modules were built with next-generation SiC MOSFETs, with 25°C RDSON per MOSFET cut approximately 50% from existing commercial SiC MOSFETs. Additionally, the external SiC anti-parallel diode was eliminated in favor of using the SiC MOSFET body diode during the dead time. The resulting 1700V SiC module used only 32% of the SiC chip area, yet reduced the 25°C module RDSON from 8mΩ to 5mΩ,...
A health monitoring method using the saturationregion resistance is proposed in this paper to identify the level of aging associated with power semiconductor switches inside a Boost converter. Power MOSFETs are one of the most age-affected components in power electronic converters, and the on-resistance has been proved to be the most significant aging factor in power MOSFETs. However, the small value...
While investigations on short-circuit ruggedness of discrete SiC MOSFET are widely encountered in the scientific literature, there is not so much research dealing with the operational robustness of high power SiC MOSFET modules. In this paper, the short-circuit (SC) ruggedness under hard switching fault (HSF) of a commercial 1.2 kV/180 A SiC MOSFET power module in half-bridge configuration will be...
The emerging 650 V large current rating, Enhancement-mode (E-mode) Gallium Nitride High-Electron-Mobility Transistor (GaN HEMT) is a promising device for low to medium power, high power density converters (e.g., motor drives, battery chargers), which require high robustness levels. Thus, a comprehensive study of the short circuit behavior of high power E-mode GaN HEMT is the subject of this paper...
Wide Band Gap power semiconductor switching devices offer superior performance compared to an equivalent Si power device. SiC MOSFETs can be competitive when compared to Si IGBTs of the same voltage class, whilst offering greater benefits at high switching frequencies. Operating SiC MOSFETs at high switching frequencies imposes significant challenges, including: Ringing and voltage overshoot issues,...
Recently, with research and development of SiC power devices, 1.2 kV SiC MOSFETs have become commercially available. The parasitic parameters, such as output capacitance, in each power device are not identical, because they depend on the device structure and material properties. Therefore, voltage sharing of turn-off operations under series-connection conditions of the power devices may be affected...
A method for in-situ high bandwidth junction temperature estimation of Insulated Gate Bipolar Transistors (IGBTs) is introduced. The method is based on the acquisition of the gate voltage plateau during turn-on, which can be directly related to the junction temperature. This allows fast over temperature protection of the power device and thus enables operation at the boundary of the device safe operation...
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