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1700V SiC modules were built with next-generation SiC MOSFETs, with 25°C RDSON per MOSFET cut approximately 50% from existing commercial SiC MOSFETs. Additionally, the external SiC anti-parallel diode was eliminated in favor of using the SiC MOSFET body diode during the dead time. The resulting 1700V SiC module used only 32% of the SiC chip area, yet reduced the 25°C module RDSON from 8mΩ to 5mΩ,...
Silicon carbide (SiC) power semiconductor technology has successfully penetrated several silicon (Si) application markets and is gaining momentum due to higher voltage withstand capability, higher switching capabilities (i.e., 100s of kHz), and ability to withstand higher operating temperatures (i.e., more than 200°C). When properly applied, SiC MOSFETs can switch in nanoseconds making this a promising...
While investigations on short-circuit ruggedness of discrete SiC MOSFET are widely encountered in the scientific literature, there is not so much research dealing with the operational robustness of high power SiC MOSFET modules. In this paper, the short-circuit (SC) ruggedness under hard switching fault (HSF) of a commercial 1.2 kV/180 A SiC MOSFET power module in half-bridge configuration will be...
Owing to the high current density but smaller die area of SiC components, high current SiC power modules typically feature a large number of parallel connected dies. Due to the faster electrical dynamics of these power modules, and the inherent mismatch of properties between the dies, certain dies can be poorly utilized — requiring either more dies to achieve a given current rating or a de-rating...
Targeting the development of a silicon carbide (SiC) inverter for electric vehicle/hybrid electric vehicle (EV/HEV) applications, the design considerations of the gate driver for the adopted SiC metal-oxide-semiconductor field-transistor (MOSFET) power modules are presented. Given the system power density requirement, the gate driver design challenges for the commercial off-the-shelf (COTS) SiC modules...
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