The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
1700V SiC modules were built with next-generation SiC MOSFETs, with 25°C RDSON per MOSFET cut approximately 50% from existing commercial SiC MOSFETs. Additionally, the external SiC anti-parallel diode was eliminated in favor of using the SiC MOSFET body diode during the dead time. The resulting 1700V SiC module used only 32% of the SiC chip area, yet reduced the 25°C module RDSON from 8mΩ to 5mΩ,...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.