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We propose a MHz-switching-speed current-source gate driver for Silicon-Carbide (SiC) power MOSFETs. The proposed gate driver uses an inductor as a current source during switching transient. Compared with a conventional gate driver, the proposed gate driver reduces switching time ioff and ion by 20% and 32% respectively.
Wide bandgap (WBG) power electronic devices realized using silicon carbide(SiC) and gallium nitride (GaN) are increasingly replacing their silicon(Si) counterparts in power electronics applications. The obvious advantages of these devices with their higher switching speeds, lower on state resistance and high temperature operation over Si devices have aided in the paradigm shift towards wide bandgap...
The Self Turn-ON influences the turn-ON and short-circuit behaviour of the IGBT. This is a positive feedback by the IGBT on itself and increases its turn-ON speed. The strength of the effect depends on the gate structure's design. Therefore, IGBTs with different gate structures are investigated with TCAD simulations. Additionally, its influence during Fault under Load is investigated.
This paper investigates the switching performances of two state-of-the-art half-bridge SiC MOSFET modules using a standard double pulse test methodology. A deliberate choice of the modules with the same voltage and current ratings, the same packaging, but different stray inductances and capacitances is made in order to give an insight into the influence of parasitics in the switching transients and...
This paper proposes the novel generation method of gate signals to control output voltage in a wide range and to achieve synchronous rectification operating in half-bridge LLC resonant converters. The switching frequency modulation is used in half-bridge LLC resonant converters for control strategy of output voltage. The switching timing of secondary MOSFETs is compensated using the gate signal of...
This paper presents an overcurrent and short-circuit (SC) detection method for high current SiC MOSFET modules. It adapts the existing desaturation detection (= UCE,desat method) known from IGBTs. These adjustments include separate detection paths for hard switching faults (HSF) and fault under load (FUL) as well as overcurrent. The necessity of a junction temperature compensation for detecting each...
A hybrid switch configured by silicon insulated gate bipolar transistor (Si IGBT) and silicon carbide metal-oxide semiconductor field effect transistor (SiC MOSFET) have been investigated to be a cost effectiveness and high efficiency. In this paper, we aimed reducing the hybrid switch loss and expanding operation area of frequency and current. We measured dependency on various parameters to analyze...
This paper investigates gate driver design challenges encountered due to the fast switching transients in medium voltage half bridge silicon carbide MOSFET power modules. The paper presents, design of a reduced isolation capacitance regulated DC-DC power supply and a gate driver with an active Miller clamp circuit for a 10 kV half bridge SiC MOSFET power module. Designed power supply and the gate...
In this paper different gate drive concepts to eliminate parasitic turn-on for SiC MOSFETs are discussed. Experimental results show a potential for lowering switching losses of SiC MOSFETs during fast switching operation, reduction of turn-off overvoltage across the bodydiode. Finally increased requirement on the gate drive unit are discussed.
An analysis of the failure modes due to short circuit on planar and trench 1200ν — 40mΩ SiC-MOSFETs is presented, including single and multiple events. Short circuit waveforms, energy, as well as electro-thermal simulations are presented, enabling the identification of the main root causes of failure. Results demonstrate similar performance regarding failure after turn-off (thermal runaway, gate)...
SiC devices are now achieving voltage and current ratings which challenge applications previously dominated by IGBTs. Unlike with IGBTs parallel connection of SiC devices may be used to reduce conduction losses. SiC conduction loss is reduced with low Rds(on), or large die area, while switching loss reduction requires small Coss, and small die area. An improved analytical model is presented to accurately...
This work discusses the challenges in the design of a SiC Power MOSFET compared to their silicon-based relatives and describes a novel SiC Trench MOSFET concept. The most prominent difficulties being identified are related to the properties of the channel and the gate dielectric as well as their interface. Different approaches to realize a SiC MOSFET are briefly discussed and the CoolSiC™ MOSFET concept...
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