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The application of Gallium Nitride (GaN) power transistors in a single phase inverter for photovoltaic (PV) systems is presented inverter. The power of the system is 2 kW. For both stages (DC boost stage and inverter stage), a very high switching frequency of 250 kHz is used. By this, a highly compact design for the inverter (200 × 150 × 80 mm3 / 2.4 l) was reached. The power to weight ratio corresponds...
In this paper, DC-DC power converter based on Galium Nitride Gate Injection Transistors (GaN GIT) is presented. The use of such power devices allows to increase of switching frequency and to reach high efficiency. Efficiency measurements of power conversion were carried out for two switching frequencies (100 kHz, 200 kHz, 400 kHz).
SiC devices are now achieving voltage and current ratings which challenge applications previously dominated by IGBTs. Unlike with IGBTs parallel connection of SiC devices may be used to reduce conduction losses. SiC conduction loss is reduced with low Rds(on), or large die area, while switching loss reduction requires small Coss, and small die area. An improved analytical model is presented to accurately...
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