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Increasing the channel width of an IGBT is an obvious way to lower the Vce, sat value without any influences on the switching losses of the device. Consequently, the achievable benefit of IGBTs is limited due to the corresponding increase of the desaturation current, which threaten the short circuit robustness. This paper presents the benefits of an IGBT which could be realized, if the feature of...
Medium voltage 10 kV Silicon Carbide MOSFETs, introduce challenges regarding converter design. Very high rate of voltage change and capacitive couplings to for example cooling systems cause increased electromagnetic interference. The aim of this paper is to accurately model the capacitive coupling to a heat sink and experimentally validate the model. An analytic model of the heat sink is developed...
This paper introduces a control method for Reverse-Conducting (RC-)IGBTs which reduces the control dead time of RC-IGBT inverters. Switching measurements with 6.5 kV RC-IGBTs concerning the applicability of the introduced control method and the effect of a load current direction change during the desaturation pulse are presented.
This paper investigates gate driver design challenges encountered due to the fast switching transients in medium voltage half bridge silicon carbide MOSFET power modules. The paper presents, design of a reduced isolation capacitance regulated DC-DC power supply and a gate driver with an active Miller clamp circuit for a 10 kV half bridge SiC MOSFET power module. Designed power supply and the gate...
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