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Silicon Carbide (SiC) diodes are already commercially available since 15 years and have gained significant market share in power supply and solar converter applications. In the last few years, the SiC device family was enriched by switches. They become increasingly more important for differentiation of power converters in size, weight and/or efficiency. The dedicated material properties of SiC enable...
This work presents a novel Si-on-SiC laterally-diffused (LD) MOSFET structure intended to provide high breakdown voltage of 600 V and be resistant for harsh-environment space applications. Single-event effects (SEE) and total ionizing dose (TID) are investigated for the first time in such device. Initially, the considered Si LDMOS structure on SiC suffers from single-event burnout (SEB) at a drain...
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