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Storage class memories (SCMs); for instance, (STT-)MRAM, ReRAM, PRAM, and 3D XPoint, have much attention from storage systems. Each SCM has different characteristics, such as read/write latency, endurance, and bit cost. For example, MRAM has short latency and high endurance, but its cost is high. In contrast, ReRAM, PRAM, and 3D XPoint have lower endurance, but their cost is lower than MRAM. From...
In this paper we present the recent advances in the understanding of microscopic mechanisms driving the resistive switching in ReRAM devices using ab initio theoretical methods. We highlight the complex interplay between interface reactions and charge injection in the generation of oxygen Frenkel pairs during the forming step. Energy barrier calculations suggest that the formation/destruction of the...
A compact model for the low and high resistance state conduction characteristics of electroformed capacitors with hexagonal boron nitride (A-BN) as insulator material and with multi-layer graphene and metal electrodes is presented. The model arises from an approximation of the expression for multi-filamentary electron transport with parabolic shaped constrictions. The model takes into account the...
We propose and experimentally demonstrate top-gated complementary n- and p-type black phosphorous FETs by engineering the workfunction of pre-patterned electrodes embedded in a SiO2 layer. Pre-patterned electrodes offer the possibility of reducing the exposure time of exfoliated flakes to oxidant agents with respect to top-contacted devices and maximize the accessible area for sensing applications...
Recently, studies on ReRAMs and their reliability have received increased attention. The reliability issue is due to the nature of oxygen vacancies behaviour under biasing conditions which necessitate further studies to achieve an in-depth understanding. In this work, we fabricated several HfOx ReRAM devices with different structure, material, and thickness, followed by a study of their electrical...
Recently it was demonstrated that an asymmetric DRAM capacitor stack can introduce non-volatility and at the same time outperform ferroelectric HfO2 based FeRAM in terms of cycle endurance. With the present work, we provide an in-depth study of the underlying mechanisms and perform a comprehensive retention study that characterizes ferroelectric memories. Piezoelectric force microscopy is applied...
Ferroelectric hafnium oxide (HfO2)attracted a lot of interests since its discovery in 2007. Its scalability and CMOS compatibility are two advantages over conventional ferroelectric materials, favoring new device integration. Doped ferroelectric HfO2 Metal/Insulator/Metal capacitors have been widely studied for DRAM and FeFET applications. Silicon electrodes have not been discussed in much detail...
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