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Germanium-on-silicon waveguides are designed, fabricated and characterized with a novel near-field infrared spectroscopy technique that allows on-chip investigation of the in-coupling efficiency. On-chip propagation along bends and straight sections up to 0.8 mm is demonstrated around λ = 6 μm.
Terahertz light-matter interactions within a semiconductor-filled waveguide can be tuned in space and time via photoexcited regions created on ultrafast time scales and sub-THz wavelength length scales by a patterned optical pulse. These light-induced metal-dielectric structures can be used to dynamically modify the photonic band structure of THz light within the waveguide, controlling the amplitude,...
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