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This tutorial lecture provides an introduction (suitable for those relatively new to the subject) to methods available for the extraction of emitter characterization data from field electron emission (FE) current-voltage data, to the problems of doing this reliably, and to some recent progress in developing better understanding of the issues involved.
New device concepts and materials for the fabrication of compact THz (> 100 GHz) nanoelectronic and vacuum nanoelectronic devices are of particular interest for broadband communication, security screening of packages and chemical materials, biomedical examination, and other applications. In particular, new compact and room-temperature THz imaging systems as well as environmental monitoring are...
With a large-area field electron emitter, when an individual post-like emitter is sufficiently resistive, and current through it sufficiently large, then voltage loss occurs along it. This conference presentation provides a simple analytical and conceptual demonstration that this voltage loss is directly and inextricably linked to a reduction in the field enhancement factor (FEF) at the post apex,...
We report on field-emission investigations of micro-structured stainless steel. The most important result is that the threshold field strength is not even four times greater than an equivalent-sized CNT field-emitter array. Stainless steel can used as large-area field-emission cathode in vacuum components.
In this work, a p-Si field emitter array produced by wafer dicing is presented. Different strategies to produce a variety of shapes of the tips are shown. The resulting arrays show excellent emission characteristics compared to other field emitter, like carbon nano tubes.
We tried to improve field emission properties of carbon nanotube (CNT) paste emitters by controlling the size distribution of aggregated SiC fillers. The SiC fillers used as an adhesion promoter strongly affects the dispersion of CNT paste, determining uniformity and reproducibility of the field emitter. We found, to date, that the optimum distribution is about 1 μm of D50, the value of the particle...
In this study, amorphous selenium based photoconductor with different film thicknesses were fabricated and applied to prototype photodetectors. The use of thick photoconductor resulted in higher sensitivity due to carrier multiplication. Advantages and disadvantages of the thick photoconductor were investigated.
Amorphous indium-gallium-zinc-oxide thin film transistor (a-IGZO TFT) was used as active driving device for ZnO nanowire field emitters. The characteristics of ZnO FEAs controlled by a-IGZO TFT were studied. Low driving voltage, precise control and stabilization of field emission current are achieved.
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