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Brain-Machine-Interface (BMI) is a system that builds artificial pathways between different parts of the neural system. Due to different application scenarios, a BMI system may consist of a neural signal acquisition, electrical neural stimulation, signal processing, wireless communication, and power management. This paper reviews the state-of-art development in system-on-a-chip BMI design technology...
In this paper, a novel triple reduced surface field (RESURF) LDMOS with N-top layer based on substrate termination technology (STT) is proposed. The analytical models of surface potential, surface electric field, breakdown voltage (BV) and optimal integrated charge of N-top layer (Qntop) for the novel triple RESURF LDMOS are achieved. Furthermore, STT is applied to avoid the premature avalanche breakdown...
This paper presents a novel hardening triple-well design for an six-transistors CMOS memory cell fabricated in 65 nm feature size. The new approach calculates the effects of single event transient (SET) with junction currents, which is derived based on device physics. Simulation presents that charge collection can be effectively mitigated with the use of guard ring contact in triple-well CMOS process...
A surface-potential-based compact model for the doped polysilicon (poly-Si) thin-film transistors (TFTs) is proposed in this paper. By develop in gap proximate explicit solutions of the surface potential from the Poisson's equation, we can express the drain current as explicit functions of applied voltages with using the charge sheet approach. Compared with the previous models, high accuracy and efficiency...
A closed-form drain current model for amorphous oxide semiconductor thin-film transistors is proposed in this paper. By adopting the effective charge density method and reformulating Lambert W function as two different exponential terms in different regions, both non-degenerate and degenerate conduction regimes are taken into account. Furthermore, an I–V model considering both the trapped and free...
This paper described a disposable overoxidized polypyrrole/graphene/gold (OPPy/GE/Au) microelectrode by two-step electrooxidation at a three-electrode-integrated electrochemical sensor, and its application for selective determination of dopamine (DA) without the interference of ascorbic acid (AA). Compared with the bare Au electrode, OPPy/GE/Au electrode exhibits much stronger electroactivity for...
A SiC Schottky barrier diode (SBD) with a novel junction termination structure including two mesas and one P+ guard ring was proposed and demonstrated. Under reverse bias, charge will be attracted to the position of guard ring instead of concentrating at the edge of Schottky junction due to the existence of the first mesa. In addition, the second mesa will further cause the high electronic field expanding...
An analytical model for threshold voltage of the normally-off GaN-based fin-shaped field-effect transistor (FinFET) is obtained. Analytical expressions for the threshold voltage and its roll-off effect are presented. Some design insights can be obtained from the results. The explicit expression for threshold voltage makes the model suitable to be embedded in circuit simulation and design tools.
Si-nanocrystals (Si-NCs) embedded nitride-oxide-semiconductor (NOS) structure is fabricated by plasma enhanced chemical vapor deposition (PECVD) and post annealing technique. Charging effect in the floating gate structure is then characterized by Kelvin probe force microscopy (KPFM) at the nanoscale. The stored charge density is calculated by an electrostatic analysis, which is on the magnitude of...
The Gibbs free energy released during the mixing of river and sea water has been illustrated as a promising source of clean and renewable energy. Reverse electrodialysis (RED) is one major strategy to gain electrical power from this natural salinity, and recently by utilizing nanochannels a novel mode of this approach has shown improved power density and energy converting efficiency. In this work,...
In this paper, we studied effects of doping concentration on the semi-floating gate (SFG) image sensor by Sentaurus technology computer aided design (TCAD) simulation. Our results show that the doping concentration of about 6e16 cm−3 for both n-well and p-well is appropriate for the SFG sensor. The doping concentration plays an important role on the output current range and the sensitivity of the...
The impact of polysilicon thickness (THK-poly) and channel hole diameter (CHCD) on channel boosting potential during program inhibit has been studied with Sentaurus device simulator for three dimensional (3D) NAND memory. According to the distribution of boosting potential along the channel, the potential level of thinner THK-poly is higher than that of thicker one. Moreover, the correlation between...
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