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Low power design is critical in today's chip design. Clock tree takes much of chip power. “Clock tree cost” is introduced to help design low power clock tree. Five methods are proposed to reduce “clock tree cost” and improve clock tree efficiency. They include clock sink depth check, redundant scan mux check, redundant clock gating cell check, CCOPT (Clock Concurrent Optimization) and simple clock...
In this paper a wafer-level chip-scale packing (WLCSP) for si-based driver using bump technique will be presented. The WLCSP is completely fabricated using conductive redistribution layer (RDL) technology which include dielectric material polyimide (PI) and RDL metallization, then the copper bumps are electroplated on the under bumping metallization (UBM) layer. The diameter of the bump is 200um and...
Designing and fabrication of 4kV, 20A 4H-SiC PiN diodes with JTE junction termination structure have been investigated in this paper. A bevel mesa structure and a single-zone junction termination extension (JTE) have been employed to achieve the target voltage. Finally, an optimized mesa structure without sub-trench (mesa height of 2.2 µm and mesa angle of 20°) has been experimentally demonstrated...
A novel high-voltage trench SOI LDMOS with ultra-low specific on-resistance (Ron,sp) is proposed and it features a Trench-Field-Enhanced (TFE) structure around the deep trench dielectric layer. The TFE structure consists of an L-shaped p-region, a symmetrical-L-shaped n-region and two high-doping p+ regions. In the OFF state, as the trench-field-enhanced effect (TFE-E), electric field in the bulk...
This paper presents the 3 MeV proton irradiation results of a 16Mb commercial MRAM. The total ionizing dose(TID) effects induced by proton irradiaton and the following room temperature annealing behaviors are analyzed in detail. Read bit errors and electrical failures were observed when the proton fluence was accumulated to 2.5×1011 particles/cm2. The peripheral circuits are more sensitive to proton...
The impacts of total ionizing dose by cobalt60 on the 4 Mb Serial Peripheral Interface NOR Flash memory are studied in detail. Electrical parameters degradation and unidirectional upsets are demonstrated with physical explanations.
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