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In this work, p-type SnO thin films by DC sputtering at low temperature and TFT structures were fabricated. A probable process window of sputtering atmosphere of a mixture of Ar-O2 was found for SnO TFTs application. Fabricated-type SnO TFTs with Ion/Ioff of 5×103 and mobility of 0.17 cm2/V▾s on Al2O3 dielectrics were fabricated. An unusual drain current shake in subthreshold field was found and more...
The three-dimensional (3D) nature and continued dimensional scaling of Fin-, Nanowire-, and Gate-All-Around-FETs raise a host of unique challenges to device and process design that impact both performance and yield. We highlight selected technology challenges and solutions, specifically doping requirements for isolation, SD/E, and contact, as well as a new advanced planarization technique.
The formaldehyde detection is important for protecting human health and controlling environment pollution. Many metal oxide sensors have been developed for the formaldehyde detection in the last decade. The NiO sensor is considered as the most sensitive one, which is able to detect very low concentration of formaldehyde (< 1 ppm). But it needs a high operating temperature. Presently, graphene has...
We demonstrate a facile method to grow highly uniform monolayer graphene films on copper foils by atmospheric pressure chemical vapor deposition (APCVD). The technique in this method includes lowering flow ratio of methane/hydrogen and extending exposure time to hydrogen. All the multilayer islands will be etched away by hydrogen during this growth process, resulting in obtaining highly uniform monolayer...
We report the characteristics of HfO2/Al2O3 gate dielectric nanometer-stacks deposited on InAlAs at 245 °C by atomic layer deposition. The annealing effect on the interface and electrical properties of stack films was investigated by X-ray photoelectron spectroscopy, and electrical measurements. It is demonstrated that the resultant of As2O3 during annealing is suppressed by Al2O3 layer. The annealed...
This work is focused on synthesis of molybdenum oxide (MoO3) by Plasma Enhanced Atomic layer deposition (PEALD) using molybdenum hexacarbonyl (Mo(CO)6) is selected as precursor for Mo and O2 is adopted as precursor for plasma. Ex-situ growth characterizations were carried out by X-ray reflectivity (XRR), scanning electron microscope (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy...
A flexible rGO-perovskite hybrid photodetector has been fabricated in a solution-based method. X-ray diffraction and UV-absorption characterization demonstrate the high quality of the CH3NH3PbI3 thin films. Through the electrical measurements, it is found that low dark current and representative time-dependent photoresponse to different wavelength is obtained at the same power density. Fast raise/decay...
The effects of an intentional interface engineering of a heterogeneous CeO2-Nb:SrTiO3 interface on the resistive switching behaviors of HfO2-based resistive random access memory (RRAM) has been investigated. Switching parameters including set voltage, reset voltage, low resistance state and high resistance state, are greatly improved by the interface engineering. Besides, low power consumption RRAM,...
Zinc oxide is a well-known wide band gap semiconductor material which can be applied to thin film transistors. Al-doped ZnO (AZO) has a better electrical conductivity than Zinc oxide at the same time with good photoelectric properties. In this paper, the method of atomic layer deposition (ALD) was used to prepare the ZnO and Al:ZnO (AZO) thin films as the active layers on silicon substrates at 100...
In this paper a novel Double-References and Dynamic-Tracking Writing (DR-DTW) scheme is proposed for Resistive Random Access Memory (ReRAM) to improve bit-yield due to tail-bit issues and high-temperature resistance variations. Based on this scheme a 128bit HfO2 ReRAM is implemented in UMC 0.13µm Mixed-Signal process. The test results show that the Ron/Roff window increases to 10×. Compared with transitional...
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