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Electron mobility has been characterized for drain current simulations of AlN/GaN MIS-HEMTs. We especially focus on the embedded source field-plate structures (ESFP) for high power applications. To apply the models to simulate power switching applications including DC-DC converters, electron mobility equations are the key to characterize DC bias conditions under dynamic operations. The model is implemented...
In this paper, a novel triple reduced surface field (RESURF) LDMOS with N-top layer based on substrate termination technology (STT) is proposed. The analytical models of surface potential, surface electric field, breakdown voltage (BV) and optimal integrated charge of N-top layer (Qntop) for the novel triple RESURF LDMOS are achieved. Furthermore, STT is applied to avoid the premature avalanche breakdown...
A single photon avalanche diode (SPAD) device with deep P-well is proposed, which is protected by surrounding P-implantation layer, P buried layer and P+ buried layer. The P+ buried layer of this SPAD device has great help to enhance the uniformity of electric field in avalanche multiplication region. The primary contribution of the P buried layer is to improve the electric field at the edge. Therefore,...
A SiC Schottky barrier diode (SBD) with a novel junction termination structure including two mesas and one P+ guard ring was proposed and demonstrated. Under reverse bias, charge will be attracted to the position of guard ring instead of concentrating at the edge of Schottky junction due to the existence of the first mesa. In addition, the second mesa will further cause the high electronic field expanding...
A comparative investigation of γ-ray total dose ionization damage at high and low-level injection (HLI/LLI) for different dose rate irradiation in double polysilicon self-aligned bipolar NPN transistors is presented. The transistors reveal anomalous dose rate radiation responses for Emitter-Base (E-B) electrical field strength in forward active mode. This effect is probably associated with the different...
In this paper, the RBSOA characteristic of nanoscale Partially Narrow Mesa IGBT (PNM-IGBT) is studied by numerical simulation. Result shows that the maximum turn-off critical current of nanoscale PNM-IGBT increases about 12.3% compared with the conventional trench IGBT. The main reason is that the electric field distribution of PNM-IGBT at turn-off state is more flat and uniform than the conventional...
In this paper, we propose a radio frequency lateral double diffused metal oxide semiconductor device with part of stepped buried oxide layer, and establish a model of the surface electric field of the device. From the simulation results, it is concluded that the surface electric field distribution model is basically consistent with the simulation results, and the new peak electric field is obtained...
A novel 4H-SiC metal semiconductor field effect transistor with localized high-doped P-buffer layer is proposed in this paper. Compared with conventional structure, because of the higher doped concentration in the P-buffer layer between the gate and the drain, greater depletion layer generates and extends to the channel, which reduces the concentration of channel carrier and modulates electric field...
A novel high-voltage trench SOI LDMOS with ultra-low specific on-resistance (Ron,sp) is proposed and it features a Trench-Field-Enhanced (TFE) structure around the deep trench dielectric layer. The TFE structure consists of an L-shaped p-region, a symmetrical-L-shaped n-region and two high-doping p+ regions. In the OFF state, as the trench-field-enhanced effect (TFE-E), electric field in the bulk...
GaN-based vertical field effect transistors (VFETs) are very promising in various power switching applications owing to their high current density and small chip size. However, it is still challenging to obtain high breakdown voltage (BV) and low on-resistance (Ron) in the practical VFETs. Design and simulation of the device structures are necessary in shortening the device development progress. In...
Inspired by the computing architecture of human brain, neuromorphic computing promises massively parallel, energy efficient and fault tolerant computation compared with conventional von Neumann approaches. In order to achieve this ambitious goal, one of the crucial tasks is to make devices that can emulate the functions of biological synapses at the physical level. Here we fabricated a novel Pt/TaOx/Ta...
For the special breakdown mechanism of AlGaN/GaN HEMTs devices, a novel AlGaN/GaN HEMTs with the partial fixed positive charge in buffer layer is proposed in this paper. Through the introduction of the partial fixed positive charge in buffer layer, 2DEG in the area is depleted, then the low 2DEG density region is formed, which modulate the concentration of 2DEG and the surface electric field distribution...
Stable normally-off operation with high threshold voltage (Vth) is strongly desired in power switching applications. A p-GaN area under the barrier-recessed gate is employed to improve the Vth and off-state characteristics of the GaN-based HEMTs. TCAD-based device simulations are carried out to demonstrate and optimize the proposed structures. Finally, improved performances with Vth over 5V and breakdown...
By using the MOS energy band diagram and Negative Bias Temperature Instability (NBTI) degradation model, an equation of NBTI degradation with channel doping concentration has been derived. Meanwhile, a new NBTI inhibition method by using different doping concentration has been proposed. The quantitatively calculation and simulation results show that, with the proposed method, the NBTI inhibition rate...
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