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In half-bridge inverter topology, it is well known that the driver circuit design at high switching frequency is always the challenge due to the ground floating of the high-side driver circuit. At very high switching frequency such as 13.56 MHz, the common mode noise becomes a critical issue because it strongly effects to the stability and the efficiency of the inverter especially in case of the high...
In the previous studies, it has been shown that the steady-state operation of a class-E resonant inverter can be rapidly simulated in the frequency domain by extending the concept and mathematical form of electrical impedance. This paper provides a more comprehensive solution for the efficient simulation of practical class-E resonant inverter, which is driven by a MOSFET switch. The parasitic components,...
This paper presents a new technique to detect the junction temperature of Silicon Carbide (SiC) MOSFET devices. The process of detection is based on injecting a high frequency/low amplitude sweep signal into the gate lead of a SiC device during its OFF-state period. A frequency response analysis is carried out to determine the variation in the impedance which is a function of temperature change. The...
Due to their better figure of merits, gallium nitride field effect transistors (GaN FETs), when employed as the switching devices in power electronics applications, have better performance than conventional silicon metal-oxide-semiconductor field effect transistors (Si MOSFETs). One of the superiorities of GaN FETs is their ability to switch very fast, which results in low switching losses. However,...
The demand for high-efficiency power converters is increasing continuously. The switching losses are typically significant in power converters. During the switching time, the component is exposed to a considerable voltage and current causing power loss. The switching time is limited by parasitic inductance produced by traces and interconnections inside and outside the package of a device. Moreover,...
Silicon carbide (SiC) devices attract widespread attention of scholars because of their superior characteristics. However, the interaction between the upper and lower devices during the switching process in the bridge circuit will affect the safe operation of SiC devices. To suppress the crosstalk spurious voltage, this paper proposes a gate driver circuit based on magnetic coupling for SiC devices...
In this paper, a DC power supply for wide input-voltage range and multi output, which is applied to both 200-V and 400-V power sources, is proposed. This power supply consists of a flying-capacitor three-level PFC and a LLC resonant three-level DC/DC converter. In the PFC, the circuit topology enables to use 600-V devices, minimize the detection circuit and the gate drive circuit, and reduce the size...
In this study, a mode transition scheme between a single phase half bridge 2-level voltage source converter (VSC) and a 3-level T-type VSC is proposed. The efficiency of 3-level T-type VSC can be increased by the mode transition scheme. The mode transition scheme select the efficient operation method between a 2-level and 3-level VSC. The 2-level VSC or 3-level VSC operation method are selected depending...
This paper proposes the development of a fully GaN HEMT based Active Neutral Point Clamped (ANPC) inverter. The main aim is to explore the benefits of the use of such device technology on the system level efficiency, power density and reliability. The paper starts by introducing the inverter topology and the device features, static and dynamic characterisation and continues with presenting and discussing...
The voltage boosting control (VBC) is presented to achieve low-power and high slew-rate error amplifier for enhancing the load transient response of dc-dc converters. The VBC is employed to increase/decrease the gate voltages of the output-stage transistors of the error amplifier, leading to large current driving capability with simple circuitry during transient. In addition, the accelerative scheme...
We developed a gate driver IC that can power IGBTs of up to 500 amperes for HEVs and EVs. A newly developed Zener clamping circuit effectively suppressed the IGBT spike voltage in short circuit (SC) mode. The silicon-on-insulator (SOI) process was utilized to achieve high temperature operation and high surge protection.
In this study, we demonstrated an isolated-type flyback converter circuit for high-frequency operations. We estimated the high-frequency characteristics of passive devices in various conditions of a DC-DC converter circuit. We experimentally developed the isolated-type flyback converter circuit and evaluated the frequency response properties. In order to verify the fast-switching operation, the input...
This paper proposes a gate drive circuit with multiplexed transmission systems based on frequency-division multiple access for by using surface acoustic wave (SAW) filters. The SAW filter are suitable for use in the gate drive circuit because of their capability to operate at high temperatures and galvanic isolation. The proposed gate drive circuit using SAW filters can reduce the number of signal...
This paper presents a comprehensive online condition monitoring algorithm for power semiconductor devices. The proposed algorithm utilizes the voltage measurement between the collector and emitter of power semiconductor devices to fully monitor the performance and state of the device. The proposed algorithm provides four different detection and monitoring conditions of the device; these four elements...
This paper investigates the advanced IGBT gate driving strategies which optimizes its switching behaviours and compares with the conventional driving method. The optimal IGBT performance not only relies on its advanced semiconductor design and fabrication techniques, but also the optimized local control and protection from intelligent gate drivers and global converter control strategy. An advanced...
This paper proposes an ac-ac converter with bipolar voltage gain. It has both inverting and non-inverting operations. It has no shoot-through problem of voltage source or capacitor and can eliminate pulse-width modulation (PWM) dead-time between the switches, therefore high quality output ac power can be obtained and reliability of system can be improved greatly. The proposed converter can compensate...
HV n-/p-LDMOS devices with the source-side extending into bulk-region to evaluate the electrostatic-discharge (ESD) protection robustness by a TSMC 0.25 µm 60 V process are investigated in this paper. After a systematic analysis, the trigger voltage (Vt1) values of the n-LDMOS with the source-side extending into the bulk-end either by uniformly or non-uniformly distributed manners that had decreased...
The converter valve is the critical link of AC and DC system and the most commonly used switching devices for converter valve are thyristors. The performance of thyristors could significantly affect the performance of converter valve while the transient characteristics and second order effects of thyristor are critical to determine the reliability of converter valve in HVDC (High Voltage Direct Current)...
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