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In this work we investigate the behavior of MIS- and Schottky-gate AlGaN/GaN HEMTs under high-power pulse-stress. A special setup capable of applying pulses of constant power is used to evaluate the electro-thermal response in different operating points. For both types of devices, the time to failure was found to decrease with increasing drain-source voltage. Overall, the Schottky-gate device displays...
Gallium Nitride (GaN) Enhancement-mode High-Electron-Mobility Transistors (EHEMTs) are promising devices for motor drives. Hence, ensuring and gaining insight into their ruggedness against Short-Circuit (SC) faults become essential. Thus, SC stresses (types I and II) are studied for the first time in commercial EHEMTs with similar on-state resistance (∼ 100 mΩ) and breakdown voltage (∼ 600 V). As...
In this paper, we propose a Split-Recessed-Gate LDMOS (SRG-LDMOS) which minimizes HCl degradation with negligible increase in specific on-resistance. In SRG-LDMOS structure, the gate poly is split into two parts, the primal gate on the channel and the secondary recessed gate on the STI. This secondary recessed gate is nominally connected to source to minimize the HCl degradation although it is possible...
Hydrogen diffusion physics of breakdown voltage instability in Trench Field Plate Power MOSFET was simulated. We developed TCAD model which incorporated transient hot hole-injected Si-H bond dissociation and hydrogen diffusion. This model indicated that generated hot holes near trench bottom increase trapped hole density in Si/Field Plate oxide interface. In addition, hydrogen diffusion limits hydrogen...
A new concept to realize self-protected ESD structure for 700V high side gate drive IC without additional process steps and area penalty is presented. The device was verified by simulation and confirmed by experimental results. A parasitic NPN structure integrated in high voltage level shifter LDMOS enables LDMOS to be operated within safe operating area when ESD strikes the high side driver part...
To overcome the trade-off between breakdown voltage to negative bias and HBM robustness in fully isolated Nch-LDMOS, we found and utilized a new unique parameter for HBM robustness estimation, which focused on the electric field under the drain region when TLP pulse was applied. By using this unique index parameter, we successfully achieved the optimized Nch-LDMOS with keeping high breakdown voltage...
This paper reports that the process design to cope with both high drain current density and low on-resistance in the superjunction (SJ) MOSFET. The SJ structure is attractive to reduce the specific on-resistance dramatically due to the charge compensation concept. The drain saturation current density, however, is limited by JFET depletion at bottom region of the SJ structure. This is an obstacle to...
In high voltage power devices, to improve an active device area efficiency, a new edge termination structure that applying high aspect ratio deep trench termination technique is presented. The narrow trench filled with dielectric material acts as not only an electric field relaxing layer but also a reliable hard passivation. By using this technique, the active device area efficiency is maximized up...
Despite the previously reported benefits of High Voltage Reverse Conducting RC-IGBT concepts such as the BIGT, the main obstacle for adopting them in mainstream applications is the dependency of the diode conduction losses on the applied gate voltage polarity. In most applications, adaptations are required at both control and gate drive levels for providing lower diode conduction losses. The paper...
The switching waveform of superjunction (SJ) Si-MOSFETs used in inductive load circuit was investigated. At the turn-off phase, a hump appears in the drain current. Both experiment and simulation indicated that the amplitude of the current hump drastically depends on the charge imbalance (CIB). On the other hand, at the turn-on phase, calculation showed that the dependence of di/dt on CIB is opposite...
Sintered Ag is well known for die-attach materials, suitable for Ag metalized interfaces with a self-healing function of generated cracks. A remaining risk of sintered Ag bonding may be possible degradation of interfacial strength at high temperatures. Molding process is thus important for supporting the die-attach in the encapsulated power module once certain adhesion strength is assured between...
A new high-temperature lead-free solder joint which withstands temperatures up to 300°C and utilizes superplasticity in an Al-Zn eutectoid alloy has been developed to realize SiC power semiconductor devices. The joining process consists of interfacial cleaning of the joint formed utilizing superplasticity of the Al-Zn-eutectoid alloy at 250°C followed by bonding in the solid-liquid coexisting temperature...
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