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A novel 1200 V, 80 mΩ 4-H SiC power MOSFET with a shallow step p-body has been proposed for applications with highly rugged requirements. The innovative p-body design mitigates the problems arising due to the electric-field concentration at the corners that trigger the parasitic bipolar structure in conventional planar DMOS devices. TCAD simulations of the proposed device clearly demonstrate this...
This paper provides detailed comparison of electrical characteristics of accumulation mode and inversion mode 1.2 kV SiC MOSFETs, including performance at high temperatures (up to 200 °C). Statistical data measured from over 50 dies on 6-inch SiC wafers was used for this comparison. It is concluded that the accumulation mode SiC MOSFET provides a lower specific on-resistance than the inversion mode...
Diamond has attracted extensive attention for the next generation semiconductor devices, such as high-power, low-loss and high-frequency devices under high temperature conditions. In this paper, a radiation hardness of diamond unipolar devices such as Schottky barrier diode (SBD) and metal-semiconductor field-effect transistor (MESFET) was discussed. No any degradation of ideality factor or specific...
Optimized low-inductive layouting of the package interconnections and external PCBs and bus-bars are necessary to benefit from Silicon Carbide (SiC) power devices, which allow inherently very fast switching transitions. In this paper, a comprehensive modeling procedure for highly accurate virtual dynamic characterization of discrete SiC power devices is described taking into account the 3D geometry...
A p-shield region under the gate trench is typically adopted in a SiC trench MOSFET for achieving lower oxide field and Crss. In this work, we comprehensively studied the impact of a floating termination at the p-shield region on device performance. The SiC trench MOSFET's internal dynamics is revealed with numerical simulations. It is found that a lloating p-shield can effectively reduce the OFF-state...
This paper investigates the effect of negative gate bias voltage (Vgs) on the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs. The device's ability to withstand energy dissipation during avalanche regime is a connoting figure of merit for all applications requiring load dumping and/or benefiting from snubber-less converter design. The superior material...
In this study, we constructed a novel measurement setup with a large current rating to measure fast Id change, and evaluated the decrease in Id due to positive AC gate bias, using commercially available SiC MOSFETs. In addition, by comparing the obtained fast 7d change results with the threshold voltage (Vth) shift measured by a conventional DC gate stress test, we verified that the conventional DC...
Short circuit capability of a 1200V SiC MOSFET and a 1200V Si IGBT is compared and analyzed in this work, and the channel mobility in the SiC MOSFET over a broad temperature range from room temperature up to 2000 °C has been extracted for the first time. Experimental results show that SiC MOSFET exhibits shorter short circuit withstand time (SCWT) compared to Si IGBT. 1-D transient finite element...
This paper discusses a new technique to accurately characterize parasitic inductances of discrete fast switching MOSFETs based on S-parameters measurement using two-port vector network analyzer. The method is validated through case studies of 1200V SiC MOSFET in TO-247 and 30V silicon trench MOSFET in SO-8 package.
We developed a screening equipment for ceramic substrate level power module of IGBT. The equipment realizes a new screening test with current distribution. The equipment acquires magnetic field signals over bonding wires and finally classifies to normal/abnormal module automatically. We established statistics based normal/abnormal classification with image processing. It is expected to be applied...
This paper investigates the influence of short load pulse duration ton on power cycling capability of high power IGBT modules. Both IGET and diode in the target 1200 A IGET modules from two manufacturers were tested in small ton range from 1 s to 40 ms. Increasing power cycling capability of the tested IGET modules with decreasing <on down to 40 ms was determined.
Thermal fatigue of active metal brazing (AMB) substrates was investigated under severe heat cycle condition from −40°C to 250°C using developed silicon nitride ceramics (Si3N4) with high thermal conductivity and excellent fracture toughness as well as conventional Si3N4 and aluminum nitrides (AIN). No peeling off of copper layer was observed even after 1000 cycles for the AMB substrates with various...
The paper presents the benefit of an optimized gate drive which can be achieved with a new generation of very low inductive 1200V, 400A SiC-MOSFET half bridge module and a new and adapted gate driver. After presenting the influence of the dead time to the static and dynamic losses of SiC-MOSFET and internal body diode a calculation of the possible output current versus frequency is performed. Finally...
The transfer-molded package with ceramic substrate is widely developed for power modules in the industrial and automobile applications. However, the difference in coefficient of thermal expansion (Δ CTE) between the ceramics and the molding resin is a significant problem, which is the fundamental cause of “warpage”. This research provides a new concept where the stacked resin structure is composed...
We propose a method to design a module structure avoiding the risk of self-excited (SE) oscillation. By simplifying both the semiconductor device and lumped circuit model, oscillatory conditions can be extracted analytically. Results show good agreement with T-CAD simulation and measurement results of test modules. The method is applied to the design of next generation common package, which has realized...
This paper presents a novel chip on board assembly design for an integrated power switch, based on high power density 800V silicon lateral insulated gate bipolar transistor (Si LIGBT) technology. LIGBTs offer much higher current densities (5-lOX), significantly lower leakage currents, lower parasitic device capacitances and gate charge compared to conventional vertical MOSFETs commonly used in LED...
Pressure contact packages have demonstrated an improved reliability for silicon devices due to the elimination of the weak elements of the packaging, namely wirebonds and solder. This packaging approach has not yet been widely studied for SiC devices, however, it is of high interest for applications like HVDC or rail traction, where the wide bandgap properties of SiC devices can be fully exploited...
The full utilization of the active devices within a SiC power module can be limited by the common stray inductive path imposed by the substrate layout. In this paper, the prospect of integrating individual gate bulfers per power die is explored for lowering the total losses of a power module, while maintaining a good thermal distribution across the set of dies. Each die within the power module has...
SWicoii Carbide (SiC) MOSFET, enabling high frequency, high temperature and high power density, are attractive for power electronics applications. However, due to the limited area of a single chip, paralleling SiC MOSFETs is a necessary approach to increase the capacity of the power module. In this work, targeted at 20kW DC/DC converter for HEV application, we have designed and fabricated 1200V/100A...
Modern GaN and SiC power semiconductors require new experimental methods for determining switching losses as the widely accepted double-pulse-test (DPT) fails to accurately capture the dissipated energy during a switching transition because of electrical measurement limitations imposed by the very fast switching of WBG devices. In this paper, a new calorimetric measurement principle which relies on...
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