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This paper presents an experimental investigation of the dynamic performance of SiC 6.5kV JBS diodes. Using a hybrid Si SPT IGBT/SiC JBS diodes combination, we have analyzed the turn-off behavior limits of SiC JBS diodes and compared the result against a state-of-the-art Si PiN diode. The experimental results show that the JBS diodes can handle about 40A/chip at 125°C before going into thermal runaway...
In this paper, a novel hybrid power module using a new combination of dual side-gate HiGTs (high-conductivity IGBT) and SiC-SBDs is proposed. This combination achieves drastic switching loss reductions at a turn-off loss of −43%, a turn-on loss of −71%, and a reverse recovery loss of −98% compared with a conventional combination of trench gate HiGTs and U-SFDs (ultra soft & fast recovery diode)...
It was experimentally found that the short-circuit withstand capability of very narrow mesa IGBTs is degraded because of CIBL. In this paper, we report, for the first time, that conductivity modulation in the channel inversion layer of narrow mesa IGBT is the cause of CIBL. It is shown that the combination of the conductivity modulation and avalanche generation due to MOSFET-Mode operation causes...
This paper presents the “Hole Path Concept” in trench gate IGBTs in order to have extended performance in faster switching with balance low switching loss and low ElectroMagnetic Interference (EMI) noise. The hole path IGET which is utilized narrow hole extraction regions in floating p-region can realize a better turn-on di/dt controllability with high IE effect.
The overall growing trend towards electrification and, at the same time, the urgent need to minimize energy consumption strongly requires higher energy efficiency in power electronics. We present a new technology concept for next generation 1200 V IGBTs with vastly reduced overall power losses using an optimized micro-pattern trench (MPT) cell design with sub-micron mesas. Further important parameters...
This paper proposes a 90nm bulk BiCDMOS platform for automotive applications. In this platform, two types of characteristic deep trench isolations are introduced. One has a top-to-bottom air-gap which serves as a stable isolator against high voltage. Another has a tungsten plug which not only minimizes area and resistance for substrate grounding but also slims down a noise-blocking active barrier...
A novel high/low-side hybrid output transistor with high thermal safe operating area (SOA) performance was developed. The output transistor was designed by alternatively arranging high- and low-side transistors to enhance the thermal diffusion from self-heated transistors. A 42% increase in the failure energy of the conventional transistor was obtained at 300-μs short-circuit duration, and a further...
A design methodology to optimize the drift region doping properties in trench Schottky rectifiers has been presented. Advanced lithography is being used for trench devices that are designed for smaller die sizes in wireless applications. Such devices feature narrow active trenches to maximize active area utilization in combination with a wide termination trench to support the breakdown voltage. Such...
A composite device structure on Silicon-On-Insulator (SOI) layer named Self-adjust Conductivity Modulation SOI-LIGBT (SCM-LIGBT) is proposed. It can be divided into three parts: the normal LIGBT region (NLT structure), the EM-NMOS region (ENM structure) and the diode region (DIO structure). The drain of the ENM structure is connected with the n+ emitter of the NLT structure while the p+ region in...
In this work, we developed an effective technique to form a sharp and stable crystalline oxidation interlayer (COIL) between the reliable LPCVD (low pressure chemical vapor deposition)-SiNx gate dielectric and recess-etched GaN channel. The COIL was formed using oxygen-plasma treatment, followed by in-situ annealing prior to the LPCVD-SiNx deposition. The COIL plays the critical role of protecting...
This work reports a kilovolt and low current collapse normally-off GaN MOSHEMT on silicon substrate. The device with a drift length of 3 μm features a threshold voltage of 1.7 V and an output current of 430 mA/mm at 8 V gate bias. The off-state breakdown voltage (BV) is as high as 1021 V (800 V) defined at a drain leakage criterion of 10 μA/mm with floating (grounded) substrate. The corresponding...
Through optimization of the GaN buffer structure, 650V rated AlGaN/GaN power devices with negative dynamic Ron are obtained. By judicious tuning of the resistivity of the [C]-doped and unintentionally-doped (UID) layers (i.e. the charge transport properties in these layers), positive rather than the deleterious negative charged trapping can be achieved. Long term reliability testing shows that the...
Buffer traps in GaN-on-Si power devices can interact with electrons injected from Si substrate at high-voltage OFF state, leading to buffer-related dynamic ON-resistance degradation. In this work, we performed transient back-gating measurements on GaN-on-Si power transistors under both high negative and positive substrate biases. The opposite top-to-substrate bias polarities not only yield asymmetric...
A harsh high-voltage diode commutation as a result of a short circuit can destroy the diode. The ruggedness of the diode is given by the cathode design which can suppress an cathode-side filament. Measurements on 3.3-kV and 6.5-kV diodes with and without improved cathode design show the diode behavior during the short. The results are compared and similarities are found. Without an improved cathode...
In this paper, a new 1200 V-class edge termination structure with trench double field plates is proposed and experimentally demonstrated. The double field plates are buried inside the trench. One of the field plates is for modulating electric field distributions along the trench and shifting the breakdown point to the active region for achieving the ideal planar junction breakdown voltage, and the...
In this work, we introduce a new collector IGBT structure that shows a huge improvement of the short-circuit (SC) ruggedness without deteriorating the static and dynamic losses of the device. The Injection Enhanced Floating Emitter (IEFE) concept enhances the emitter efficiency at the collector side by means of higher hole current injection which increases the bipolar current gain of the IGBT device...
This paper reports for the first time that the freewheeling diode (FWD) with Relaxed Field of Cathode (RFC) technology can achieves excellent total performance by adopting a novel vertical structure. The proposed vertical structure consists of a “Light Punch-Through (LPT) II” and a “Controlling Carrier-Plasma Layer (CPL)”. The measured results of 1200 V diode show that the total loss and dynamic behavior...
Electrical characterization results (e.g. softness, cosmic ray hardness, surge current) of a novel freewheeling diode with reduced thickness and copper metallization are shown.
In this work, the influence of the initial electrostatic potential value of the floating-p region, Vfp, on the controllability over the turn-on dIc/dt (Collector current increase rate) is studied using TCAD simulation. To investigate the influence of Vfp on the turn-on characteristics, a two-step calculation procedure is used. In the first step, the off state is calculated in which the floating-p...
A 1200V-class Reverse Conducting IGBT with Alternating N+/P Buffers (AB) is proposed and its mechanism is investigated for the first time. The AB RC-IGBT features a buffer layer with alternately doped N+ and P regions. The AB is separated from the collector by a part of N-drift region. The P buffer serves as the electron barrier during the unipolar mode and forces the electrons to flow through the...
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