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The design and simulation of a Class-E3F2 power amplifier using 65nm CMOS technology are detailed in this paper. The Class-EF amplifier combines aspects of the Class-E and -F load networks such as the harmonic terminations from the Class F and the use of a shunt capacitance at the drain in the Class E. A mixed-voltage cascode topology is used for the output stage to enable the use of fast low-voltage...
A wideband Gallium Nitride (GaN) HEMT power amplifier (PA) achieving 7.6W output power over 1.1 GHz bandwidth at fo = 2.75 GHz is presented. A systematic design and synthesis of wideband low-pass matching networks realizing optimal fundamental impedance is applied. These techniques have produced amplifiers with increased output power, efficiency and very large fractional bandwidth. Additionally, the...
This paper demonstrates a power amplifier (PA) design procedure for achieving high peak efficiency over a wide bandwidth. A harmonic load-pull is performed over the desired frequency range resulting in theoretically optimum load impedances. Analysis of wide bandwidths where the harmonic bands overlap with the fundamental band and lower harmonic bands are performed. Practical impedances are found through...
The characteristics of compact tunable Colpitts oscillators built using FinFET transistor technology are presented. As compared to a conventional single gate MOSFET, the use of common-mode FinFET architecture allows for a more relaxed oscillatory criterion for Colpitts oscillator design, while adaption of independent-mode FinFETs bestows a Colpitts oscillator with a simple and efficient means for...
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