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A de-sat based short-circuit protection scheme using commercial driver for SiC MOSFETs is presented and experimentally verified on 1200V 3-level T-type SiC MOSFET module in this paper. Response time is very critical for the short-circuit protection of SiC MOSFETs due to the limited short-circuit withstand time (SCWT). Soft turn-off is required to avoid high voltage spike during the turn-off of the...
Application of low-voltage insulated gate bipolar transistors (IGBTs) in high voltage power electronics system is attractive for low cost, high operating frequency, low weight and low volume. The paper presents a multi-module-cascade High-Voltage Switch based on modular multilevel converter (MMC). With the cascade of low-voltage modules, it is realized high-voltage composite switches with working...
A 100-A, 850-V, solid-state circuit breaker (SSCB) having silicon carbide transistors and diodes was developed. The SSCB conducts 100 A continuously with air cooling in a 32 square-centimeter footprint. It is normally off and unidirectionally blocking, and has a configurable trip response allowing a range of overcurrent transients to be conducted, while maintaining a fast trip response at its fault-current...
A 700-V class Reverse-Blocking IGBT (RB-IGBT) is developed for large capacity power supply applications inevitably accompanied with increasing parasitic inductance and high current slew rate relative to their medium capacity counterparts. Compared with 600-V RB-IGBT, the device allows high dynamic surge voltage and fast switching to reduce turn-off loss by 35% under an advanced T-type-NPC three level...
This paper presents the design and evaluation of a two-switch flyback power supply with ultra-wide input voltage range (230–1300 V), fed from the floating dc bus of power electronics building blocks (PEBB) in medium voltage (MV) modular multilevel converter (MMC) applications. Rated at 80 W, 48 V output, and operating at 50 kHz, the proposed converter uses 1.7 kV SiC devices and a planar PCB-winding...
Wireless power transfer (WPT) holds great potential to achieve strong galvanic isolation, compact size, and low parasitic capacitance in the power supply of gate driver. In this paper, a wireless power supply is designed and analyzed for high voltage gate driver application. The performance of the power supply in terms of power delivery, parasitic capacitance, and driver output is explored in the...
In this paper, a method to limit fault current from DC side short-circuit condition in AC-DC power converters is presented. This approach is based on using Normally-ON SiC-JFETs in series with the DC capacitors as Current Limiting Diodes (CLDs). In this configuration, the gate and source contacts of the JFETs are connected together to make two-terminal devices (Vgs=0). Under a fault condition, the...
The series connection of insulated gate bipolar transistors (IGBTs) allows the operation at voltage levels higher than the rated voltage of one IGBT. However, the technology has not been widely applied due to transient voltage unbalance. Asynchronous gate drive signals, which cause series-connected IGBTs not to turn-on and turn-off at the same time, result in serious unbalanced voltage sharing. This...
This paper presents a performance comparison of two wide band gap (WBG) devices, a silicon carbide (SiC) MOSFET and an enhancement mode gallium nitride (eGaN) FET in a resonant inverter operating at 6.78 MHz for wireless power transfer (WPT) applications. While SiC MOSFETs provide high breakdown voltage and good thermal characteristics, eGaN FETs can reduce gate losses due to small gate resistance...
The 15 kV SiC IGBT and 15 kV SiC MOSFET have been recently developed to enable non-cascaded high-frequency (HF) MV converters. Such direct MV DC interfacing Dual Active Bridge (DAB) converter is getting popular for DC micro-grid application due to higher efficiency, higher power-density and higher MTBF over the cascaded DAB topology. The high dv/dt in these devices on hard-switching with their inherent...
High dV/dt immunity is desired for isolated gate driving of next generation fast switching power devices. This requires the on-chip isolation transformer to have a small capacitive coupling between the coils. Therefore, in this paper, on-chip transformers with solid ground shield (SGS) and patterned ground shield (PGS) structures are proposed and studied. Simulation results show that the SGS achieves...
Active front end rectifiers (AFE) are widely used in various industrial area applications. In these types of systems, AC pre-charge circuit, output LCL filter and power module switches are the three most critical power segments. AC pre-charge circuit design is often related to an overall high component volume and cost. Many manufacturers adopt mechanical contactors or breakers between the utility...
Active gate driving provides an opportunity to reduce EMI in power electronic circuits. Whilst it has been demonstrated for MOS-gated silicon power semiconductor devices, reported advanced gate driving in wide-bandgap devices has been limited to a single impedance change during the device switching transitions. For the first time, this paper shows multi-point gate signal profiling at the sub-ns resolution...
Discrete package Insulated Gate Bipolar Transistor (IGBT) devices are a popular choice for low-medium power converters. Although IGBT power modules have been extensively studied in literature, there exists a major gap for reliability study particularly for discrete devices. Current failure diagnostic tools are not mature enough for failure diagnosis and prognosis in real-time operation based on system...
This paper presents the design of a CMOS gate driver fabricated in 0.18 μm technology. Optical receivers are integrated to provide the highest dV/dt immunity. A configurable buffer with 7A current capability is also integrated. Two solutions of optical receivers and gate signal transfer are introduced. In both cases a particular attention is addressed to the delays and delay mismatches for high frequency...
Stray inductance inside power device package will be a constraint on improvement of power density as well as switching frequency in power converters because the converters will suffer from electromagnetic interference (EMI)-related problems. This paper proposes a measurement method of mutual inductance for power device packages using time domain reflectometry. The method is characterized by introducing...
Regarded as one of the most successful wide bandgap (WBG) devices, Silicon Carbide (SiC) metal-oxide-semiconductor field-transistors (MOSFETs) are being considered in an increasing number of power electronics applications. One of those applications is the hybrid and electric vehicle (HEV/EV) traction inverters where high-efficiency and high-power density is essential. From the system-level perspective,...
This paper presents a systematic characterization of a 650 V/13 A enhancement-mode GaN power transistor with p-GaN gate. Static and dynamic device characteristics are measured by taking into account of trapping induced effects such as current collapse and threshold voltage instability. Switching performance is evaluated up to 400 V, 10 A using a custom designed double-pulse test circuit. Optimal gate...
This paper reports cascaded operation of 1200V normally-on SiC JFETs in a solid state circuit breaker (SSCB) designed for medium voltage DC systems. The SSCB detects the short circuit fault by sensing the voltage rise between its two terminals and consequently uses this fault condition to power up the control circuit to turn and hold off the SiC JFETs to interrupt the fault current. Voltage sharing...
Optimizing the gate driving waveform of power devices for energy loss and noise per switching has been attracting attention. This paper proposes a systematic method to automatically optimize the gate waveform by dynamically combining real measurements and software optimization loop based on simulated annealing algorithm. The method is applied to the turn-on and turn-off process of an IGBT double pulse...
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