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Design of a fully integrated power amplifier (PA) with distributed active transformer (DAT) architecture is introduced in this paper. PA achieves high efficiency and high power performance necessary for long range internet of thing (IoT) wireless communication systems. The amplifier is implemented in a 0.18gm SiGe BiCMOS technology with 3.3 V supply voltage and achieves a peak output power of +32dBm...
The work presents a design of single stage integrated low noise amplifier using negative feedback and inductive source degeneration with DMS technique as the notch filter. Implementation of Super-low noise InGaAs HEMT MGF4937AM transistor which covers from 3.1–10.6 GHz for LNA. Due to interference from IEEE 802.11 WLAN at 5–6 GHz in UWB standard, a notch filter is used to attenuate the undesired frequency...
In this paper, the device performance in ultrascaled junctionless (JLT) over junction transistor (JT) are investigated using numerical TCAD Atlas 3D simulator software on 10 nm gate length. The main parameters of interest are analogue and radio frequency figure-of-merits. Result shows no significant advantage of JLT for analog and RF applications as compared to normal junction MOSFETs transistor....
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