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High frequency (h.f.) noise characteristics of advanced InP and GaAs HBTs were measured and simulated. The compact model (CM) HICUM/L2 v2.34 was used for the DC, AC and noise simulation as well as for the noise analysis. Geometry scalable model parameters for InP HBTs with the different emitter widths and lengths were extracted from temperature dependent DC and AC measurements on HBTs and special...
We report very wideband 100 MHz to 1 GHz active circulator with high power operation up to 30 dBm for the first time. In order to achieve broadband high power circulation and isolation, a new architecture is developed using low-loss RF choke concept and it is implemented on alumina substrate with mounted GaN HEMT devices along with other SMTs. The performed test shows minimum 15 to 20 dB isolation...
Odd-mode parametric oscillations are a common cause of malfunctioning in power amplifiers. A very typical example of odd mode oscillation is the showing up of a spurious component at the fundamental frequency divide-by-two for some input power values. In this paper, a less known instability of odd-mode nature is analyzed. It occurs at the fundamental frequency, without the generation of spurious spectral...
Wide-band digital drivers are indispensable for SMPAs (Switched Mode Power Amplifiers) in PWM (Pulse Width Modulation) and PPM (Pulse Position Modulation) applications. This paper presents the design of a wideband RF pre-amplifying buffer, innovated for very low dropout and low power complementary operation in heterojunction technologies affording only depletion type devices. A simple, passive bias...
We present a high dynamic range W-band frequency conversion IC, incorporating a base-collector diode mixer and a 9:1 LO frequency multiplier, implemented in a 130 nm InP HBT technology. The IC was designed for a broadly tunable 1-22 GHz dual-conversion receiver using a 100 GHz first IF. In up-conversion, from 1-22 GHz to W-band, the IC has 7 dB conversion loss and 23 dB IIP3; in down-conversion, from...
This paper describes a 56-Gb/s transimpedance amplifier with a level-shift circuit and double-feedback-loop (DFB) compensation architecture to achieve high input sensitivity. The level-shift circuit placed between a main transimpedance amplifier and a post amplifier mitigates the trade-off between the bandwidth and noise of the receiver, which reduces the input referred noise by 70%. The DFB compensates...
This paper presents a 94 GHz transmitter chipset in 32nm SOI CMOS. The transmitter employs two 2- bit high-speed RFDACs driven in quadrature, 20 dB gain LO drivers and 30 Gbps high-speed digital retimers and deserializers. The transmitter chip is capable of supporting BPSK/PAM4/QPSK modulation schemes, at a saturated output power Psat of +4 dBm. A maximum data rate of 20 Gbps was achieved when operating...
A fully integrated 250 nm GaN bandpass N-path filter is presented for high blocker tolerance applications. Measurements from 200 MHz to 1.9 GHz of a 4-phase shunt architecture demonstrate a broadband tunable bandpass response with insertion loss less than 5 dB, out-of-band rejection of 18 dB, in-band blocker B1dB of +18 dBm, and out-of-band blocker B1dB of +27 dBm.
The design and performance of a three stage Ka-band power amplifier MMIC utilizing a 0.2 um GaN on SiC HEMT process technology is presented. Measured both pulsed and CW, the design demonstrates over 5 W of saturated power with an associated power added efficiency (PAE) of 41%. The die size is 2.62x1.62 mm.
All the players in RF industry are looking to develop high efficiency circuits, and are willing to invest heavily to achieve this target. Increasing power efficiency enables decreasing power consumption, thus reducing the use of the resources provided from the battery, to reduce the size of cooling systems, improve reliability, and ultimately reduce the electricity bill. For advanced design of RF...
InP DHBTs are receiving a great deal of attention for its potential in the yet, undefined, 5G systems. In this paper, "waterfall" curves are evaluated for InP DHBTs at 900MHz and show that it can provide an improvement in PAE at low voltages (10% better than GaAs or SiGe HBTs). RF Knee MAG/MSG metrics at 5.4GHz and 15.4 GHz as compared to GaAs HBTs were also measured. These measurements...
We investigate the role of measurement uncertainty in achieving first-pass design success at microwave frequencies. We develop a model for state-of-the-art 250 nm heterojunction bipolar transistors, and demonstrate the propagation of correlated measurement uncertainties through the model-extraction and verification process. We then investigate the accuracy of the extracted model parameters and the...
DOTSEVEN is an ambitious research project aiming at pushing the limits of SiGe HBT technology, modeling, circuits, and systems towards mm- and sub-mm wave applications. The project with a 12.3 M€ total funding and a duration of 45 months started in late 2012 and has been sponsored by the European Commission. This paper gives an overview on the project goals, its organization, and selected results...
A typical GaN HEMT forward gate current can be described by a simplified model, i.e., a Schottky diode with a parasitic resistance. This model, though, fails to fit certain GaN HEMT devices, noticeably those with AlN spacer. The Tsu-Esaki tunneling model with transfer matrix approach was used to investigate this phenomenon. The result shows that the forward gate current at low Vg is limited by Schottky...
We demonstrated an excellent output power (Pout) density performance using a novel InAlGaN/GaN-HEMT with an 80-nm gate for a high-power W-band amplifier. The developed HEMT showed basic reliability for commercial products. A unique double-layer silicon nitride (SiN) passivation film with oxidation resistance was adopted to suppress current collapse. The developed discrete InAlGaN/GaN-HEMT achieved...
This paper represents an ultra-wide band low noise amplifier (LNA) that stands out for it high degree of simplicity, small size, extremely low power consumption and impressive broadband performance. Smart choice of topology, device scaling and Active Impedance Matching Technique enabled a good broadband matching off the amplifier. The measured performance featuring 10.2 dB transducer gain with -3...
Visible and ultraviolet (UV) micro-Raman spectroscopies are used to study the stress in GaN integrated with diamond grown by chemical vapor deposition. Mapping of stress is accomplished across a 75-mm GaN-on-diamond wafer. UV measurements from both sides of the wafer reveal an unexpected gradient between the tensile stress from the free GaN surface (~0.86 GPa) and the GaN/Diamond interface (~0.23...
FET-based switched filters do not occupy a large space in the literature due to the high loss of the switches relative to other technologies. The Super-Lattice Castellated Field Effect Transistor (SLCFET) is a low loss, high isolation, broadband RF switch that meets this need. A 4 channel tunable band pass filter employing SLCFET switches in a splitter/combiner network was fabricated in order to demonstrate...
Resonant segmented Mach-Zehnder modulators which enable DAC functionalities without the use of dedicated components are here presented. The modulators are shown to broaden the bandwidth of an EO transmitter. Error-free modulation of a 56 GBd OOK signal is demonstrated employing electronics with 22 GHz bandwidth only. The modulators are also used to shape the spectrum of an optical signal for Nyquist-space...
A novel empirical thermal modeling technique is proposed to allow improved prediction of channel temperature for GaN HEMT power devices when driven with pulsed DC/RF signals. The proposed thermal model contains a multiple-pole RC network and adapts itself based on the pulse width and duty cycles of the input signals. The model, which is incorporated within an Angelov-based compact non-linear model,...
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