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This paper presents the measured results of two circuits fabricated with a millimeter wave 100 nm Gallium Nitride on Silicon (GaN/Si) process. The first circuit is a 27-34 GHz power amplifier, presenting 6 W of output power in pulsed operation and 5.6 W in CW operation. The second circuit, using exactly the same process, is a 8-12 GHz Low Noise Amplifier presenting 1.3 dB noise figure from 11 to 13...
This paper presents a new series Doherty power amplifier (SDPA) with a single-ended output that eliminates transformers in the output matching network. The series power combining architecture offers higher output power in scaled CMOS compared to conventional Doherty PAs and is amenable to integration at microwave and millimeter wave bands. The SDPA is implemented in 45-nm CMOS SOI and achieves a peak...
A fully digital mm-wave transmitter with free- space constellation formation above the on-chip antennas is demonstrated at 100 GHz for the first time in a production 45-nm SOI CMOS technology. The transmitter features an RF-DAC architecture with antenna-level segmentation where two DAC elements are driven in quadrature by the external 100-GHz LO signal through an on- chip I/Q hybrid. Each DAC element...
This paper presents design, analysis and experimental results on synchronous and self- synchronous microwave transistor rectifiers implemented with GaN HEMTs at frequencies from 2 to 10GHz. The rectifier/power amplifier duality is explained and measurements confirming this mode of operation are presented. Finally, rectifier applications in wireless power transfer and high- frequency integrated dc-dc...
A RF leakage phenomenon in GaN HEMTs on Si substrates is analyzed with taking atomic diffusion at buffer/substrate interface into consideration, and a novel physical model of RF leakage based on the analysis is proposed. The Al or Ga atoms are moved from buffer layer to Si substrate at an epitaxial growth. Then, an acceptor layer with high hole density and an inversion layer with high electron density...
Diamond possesses exceptional physical properties, such as a high breakdown field and carrier mobility. It is therefore expected to be highly efficient for high-power RF devices. We identify hole carrier doping in diamond using nitrogen dioxide (NO2). Furthermore, we find that an aluminum oxide (Al2O3) passivation layer greatly improves the thermal stability of the hole channel. These two technologies...
The implementation of a 64x time-interleaved ADC in 32nm CMOS SOI is analyzed. Measurement results confirm 33 dB SNDR up to 19.9 GHz at 90 GS/s and 1.2V supply. Architecture details and analysis show insights into limitations and potentials of the chosen architecture. In par-ticular the input bandwidth is of concern for ADCs at more than 64 GS/s, as a larger number of sampling switches in-creases...
A transmitter with an output frequency range from 341 to 386 GHz is presented. Power output varies from 0.1 to -15.8 dBm along its operating range, while it remains above -2.9 dBm from 341 to 353 GHz. The high-frequency signal is generated using a wideband push-push voltage-controlled oscillator (VCO) with coarse and fine frequency tuning control, a 3-stage power amplifier, and a frequency doubler...
Diamond films grown by chemical vapor deposition have the potential to improve the thermal management and reliability of AlGaN/GaN high electron mobility transistors. The integration of CVD diamond with GaN involves the nucleation and growth of diamond films on GaN which induces a vertical gradient in thermal conductivity of the diamond and can result in bulk properties that depend greatly on growth...
This paper reviews recent work on 100+Gb/s SiGe BiCMOS circuits and system architectures for future wireless backhaul and 1Tb/s fiber-optics systems, and explores technology requirements and benchmark circuit scaling in future SiGe BiCMOS nodes for these applications. Among the circuits discussed are a 240GHz signal source with over 7dBm output power, a 108GS/s track and hold amplifier, 120Gb/s TIA,...
We present a fully-integrated 94 GHz transceiver front-end in a 130 nm / 1.1 THz fmax InP HBT process. Low power is obtained through low-voltage design and high transistor gain. The IC is designed for multi-function, dual-polarization phased arrays. At 1.5 V collector bias, in dual-polarization simultaneous receiving mode, the IC has 21 dB gain, < 9.3 dB noise figure, and consumes 39 mW, while...
We present power amplifier ICs with a small-signal measured 3dB-bandwidth spanning from 24 GHz to 114 GHz, implemented in a 130 nm InP HBT process. The PAs were designed using sub-quarter wavelength transmission-line baluns for output matching and series power combining. The small signal gain is 15 dB and the DC power consumption is 800 mW in low power operation. The measured output power at 3-dB...
This paper presents the design and the measured results of a GaN-based low noise amplifier MMIC designed to operate at X-band frequencies. The design successfully demonstrated current-shared topology to minimize DC current consumption while providing greater than 25dB of small signal gain and less than 2.5dB of noise figure. The LNA has shown to be robust to at least 5W of CW input power with saturated...
Thermal response of GaN HEMT amplifier under TDD operations causes ACLR degradation due to the fluctuation of output power. Transient response of the transistor channel temperature and corresponding output power is obtained analytically and numerically. Layered structure is modelled by Cauer thermal equivalent circuit where every thermal resistor and thermal capacitor is obtained assuming that the...
Process flow and device performances of an industrial 300mm Silicon Photonics platform demonstrating 25Gb/s per data lane when associated with 55nm BICMOS are presented. Advanced designs targeting 56Gb/s and using this platform are introduced. Device improvements suitable to convert such demonstrators into products are shown. Backside reflector, 40Ghz photodiode as well as WDM capability are presented...
This paper presents the characterization of a multi-level Chireix outphasing PA with a GaN discrete supply modulator MMIC at 9.7GHz. The internal PAs include class-F harmonic terminations, while the Chireix combiner determines the fundamental frequency load modulation. A power-DAC architecture provides 8 supply levels with 3 half-bridges, maintaining more than 85% efficiency. The combination of the...
W-band GaN amplifiers developed for the NASA Earth Science Technology Office, ESTO, enable compact active electronically steerable arrays (AESA's) for cloud Doppler radar. This paper describes the design fabrication and test of 100 nm GaN HEMT low noise amplifiers for NASA's latest 3-band Doppler radar instrument concept. Our results show state-of-the-art performance for a 92 GHz to 96 GHz channel...
This paper gives an overview of silicon-photonics devices and integrated circuits, drawing several analogies from electronics circuits. Methods to co-simulate the electronics and photonics components are presented. Finally, techniques to address the data rate demands in warehouse size datacenters are described including pulse amplitude modulation (PAM) and wavelength division multiplexing (WDM).
Multiple-Input and Multiple-Output (MIMO) arrays provide more degrees of freedom than conventional phased arrays. They require that every transmitting element of the array can be identified when received. One way to achieve this is to give every element its own unique frequency. Offset-transmitters may be used to introduce MIMO or Doppler Division Multiple Access (DDMA) into phased-arrays without...
Due to the superior characteristics of GaN to Si, they can be utilized to drastically increase the efficiency and minimize the size of power converter system. However, there has been a critical issue of the so-called current collapse where ON-state resistance is increased once GaN transistor is exposed to high voltage. From the temperature dependence of the switching characteristics of an enhancement-mode...
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