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In this paper, we show a low temperature neutral beam oxidation process to obtain a high quality metallic oxide film. After irradiation of a Ta metal film with a neutral oxygen beam, a nm-thick Ta2O5 film with a high film density was obtained, and a fabricated Cu/Ta2O5/Pt resistive memory (ReRAM) structure showed a bipolar resistive switching characteristic. In addition, after the deposition of a...
The Pd/SnO2/Al2O3/CuO/Ag/SnO2/Al2O3/CuO/p-Si/Al tandem p-i-n diodes with nanorod structure and addition of silver interconnecting metal layer were studied. The added interconnecting metal layer influences the material characteristics and leads the developed device to have a high relative sensitivity ratio of ∼2185% to 3000 ppm CO2 ambient gas. The response time of 20 sec is also fast. Thus, it has...
Commercially available micron-sized Ag flake particles and submicron-sized Ag particles were used to make Ag paste. The Ag paste was used to connect Si dies to Ni-Ag plated Cu substrates to achieve die-bonding joint for high temperature application. The contact between die and Ag paste was affected by the loading pressure, and was realized with only 0.2 MPa pressure. And the shear strength depended...
This work reports on metal assisted chemical etching (MACE) for high aspect silicon structures. Ultra-high aspect trenches and pillars of 400 and 80, respectively, have been achieved by MACE. Additionally, a cantilever fabrication based on above pillars is demonstrated by using assembly technology. The pillars are assembled onto glass substrate and fixed by conductive glue. The fabricated cantilever...
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