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In this work we investigate properties of ultra-narrow photoluminescence lines originating from recombination of excitons trapped by short-range potential fluctuations, caused by alloy disorder in GaAs/GaNAs core/shell nanowires. From power-dependent photoluminescence measurements we show that the emission behavior is consistent with biexciton-exciton cascade recombination in quantum dots. We also...
Compact, low-power random number generators (RNG) are essential for applications such as stochastic, bio-inspired-computing and secure system data encryption/communication. We demonstrate for the first time highly scalable RNG circuits based on the reset-state transient current fluctuation of resistive switching OxRAM devices. We propose- (i) single OxRAM based pseudo-random number generator (PRNG)...
We have analyzed inter-particle potential during binary collision of two fine particles suspended at the plasma/sheath boundary. For this analysis, we have employed a tracking analysis which gives time evolution of the particle position automatically from the movie of particle behavior. The fluctuation of inter-particle potential is originated from a major component of the plasma potential fluctuation...
In this work, we study dynamic characteristic of digital CMOS circuits of 16-nm HKMG bulk FinFET devices by optimizing fabrication windows of inline parameters. Key process parameters are ranked according to integrated circuit quiescent current (IDDQ) and delay of ring oscillators. IDDQ and delay are affected by the dual gate-spacer, the source/drain (S/D) proximity, the S/D depth, and the S/D implant...
We study the impact of random dopant fluctuation (RDF) on electrical characteristics of 10-nm-gate high-κ/metal gate gate-all-around silicon nanowire MOSFET devices. To provide the best accuracy of device simulation, model parameters are validated by using full quantum mechanical simulation and calibrated with experimental results. Physical mechanism of RDs inside channel and penetration from the...
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