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An active all-optical high-efficiency broadband terahertz device based on an organometal halide perovskite (CH3NH3PM3, MAPbI3)/inorganic (Si) structure is investigated. Spectrally broadband modulation of the THz transmission is obtained in the frequency range from 0.2 to 2.6 THz, and a modulation depth of nearly 100% can be achieved with a low-level photoexcitation power (∼0.4 W/cm2). Both THz transmission...
We measure THz-induced change in refractive index of ∼5×10−3 in high resistivity silicon at 800 nm which indicates generation of high density of free carriers. The change in refractive index increases by more than 30 times with high initial carrier density set by optical excitation compared to optically unexcited sample showing strong dependence of carrier generation on initial carrier density. The...
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