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In this work, we report about defects generation in the oxide layer of n-FinFETs during stress. Defects generation is probed using RTN traces collected at both the drain and the gate. A stress/measure approach is used to monitor the characteristics of the device, including RTN, at different levels of cumulative stress. Indicators derived from IG-VG and ID-VG measurements suggest defects generation...
The lack of dynamic stability in memory circuits such as the Static Random Access Memory can lead to read/write failures or power supply limitations. In this work, the impact of low-frequency and random telegraph noise on the dynamic variability of a single SRAM cell is examined for the first time. The dependence on device noise level, speed and duration of operation is investigated, using the Supply...
In this paper, we present extensive random telegraph signal (RTS) noise characterization in advanced SiGe:C heterojunction bipolar transistors. In frequency domain, in addition to 1/f noise, generation-recombination (G-R) mechanisms are observed at low base bias in the base noise. Their existence is confirmed by RTS noise measurements in time domain. The RTS amplitude evolves rather slowly with bias,...
The current-voltage (IV ) dependency of diodes close to the breakdown voltage is shown to be governed by Random Telegraph Signal (RTS) phenomena. We present a technology independent approach to accurately characterize the bias dependent statistical RTS properties and show that these can fully describe the steep IV -dependency in avalanche. The statistical properties also allow to more accurately describe...
The extreme resolution of CO2 gas molecules sensing, i.e., detection of single molecule, is reported. The suspended bilayer graphene beam is exploited in order to isolate the sensing part of the device from the substrate noise. Using the electrostatic force, the central part of the suspended beam is pulled-down to bottom metal electrode, which leads to two slanted graphene beams in suspension with...
The charge carrier transport in carbon nanotubes is highly sensitive to certain molecules attached to their surface. In this invited contribution, we intend to summarize the current knowledge on suspended CNFETs as NO2 sensors. Sensor recovery within minutes through self-heating has been shown. Improvements in fabrication processes aimed at reducing the impact of charge traps have reduced the hysteresis,...
This work presents a Schottky barrier based PdNi-Si hydrogen sensor for distributed wireless sensor networks with extremely low power consumption. It is shown that a variation of the electrodeposition potential is capable of creating PdNi alloys with the ratio of Pd to Ni spanning almost the entire range. Based on this, we utilise the technique of composition-modulation, in which each part of the...
The paper reports upon the design and characterization of a resistive O2 sensor, which is fully CMOS-compatible and is based on an ultra-low-power Silicon on Insulator (SOI) micro-hotplate membrane. The microsensor employs SrTi0.4Fe0.6O2.8 (STFO60) as sensing layer. Thermo-Gravimetric Analysis (TGA) Energy-Dispersive X-ray Spectroscopy (EDX), X-ray Diffraction (XRD) and Scanning Electron Microscope...
We give here an overview on our results on the large-area growth of 2D transition metal dichalcogenide semiconductors MoS2, MoSe2, WSe2 using chemical vapor deposition. The growth of MoS2 on sapphire occurs epitaxially with the crystalline orientation of the MoS2 film closely matching that of the sapphire substrate, resulting in a high-quality continuous film. The use of H2S results in more control...
We demonstrate the integration of large area graphene transparent conductive electrodes in flexible amorphous silicon multispectral (MS) photodetectors (PD). These MS diodes show a bias dependent maximum of their spectral response between the ultraviolet (UV) and visual wavelength range. This ability to shift the response maximum by external bias without the use of filter-structures and the possibility...
This study describes the fabrication of molybdenum disulfide (MoS2) field-effect transistors (FETs) using adhesion lithography and self-assembled monolayer (SAM)-based gate dielectrics. The adhesion lithography involves the formation of a SAM on metal oxides and selective removal of metal layer from the surface of SAM. Electrical characteristics of MoS2 FETs in this study resemble those of MoS2 FETs...
We investigated the floating gate memory based on MoS2 channel with metal nanoparticle charge trapping layer and polymer tunneling dielectric. Here, highly conformal and stable polymer insulator layer deposited via initiated chemical vapor deposition (iCVD) facilitates the fabricated floating gate memory to endure a substantial electrical stress significantly. To form a selective density and controllable...
Graphene has a number of remarkable properties which make it well suited for both transistor devices as well as for sensor devices such as humidity sensors. Previously, the humidity sensing properties of monolayer graphene on SiO2 substrates were examined - showing rapid response and recovery over a large humidity range. Further, the devices were fabricated in a CMOS compatible process which can be...
Integration of isolated LDMOS transistors in smart power process is subjected to bipolar parasitics due to multi layers constructions that are needed for high voltage operation. These parasitics need to be minimized to assure proper circuit functionality. Several approaches for parasitics reduction are suggested: DTI (Deep Trench Isolation) module optimization, NLDMOS and PLDMOS device construction...
We study the impact of quantum mechanical effects on the fin Electron-Hole Bilayer Tunnel FET (EHBTFET) considering different geometries. Through quantum simulations based on the effective mass approximation (EMA), it is found that the fin EHBTFET is affected by the corner effects at the substrate-fin interface, due to reduced electrostatic control that causes a dramatic reduction of the ON current...
Nowadays there are two big obstacles for further progress in CMOS device technology. The energy dissipation due to leakage and the energy required to copy information between memory and processor. Even though cutting the power of unused circuits reduces the leakage dissipation to zero, it causes the loss of the locally stored information. Thus, it must be copied back from memory, when the circuit...
A general expression is worked out for the trap-to-trap transition probability per unit time, applicable to amorphous materials where charge conduction is dominated by localized states. The outcome is a closed-form expression involving temperature and local electric potential. It is suitable for inclusion into hydrodynamic or energy-balance numerical solvers to be used for simulating devices based...
This work reports the results of a layout-aware substrate modeling methodology for HVCMOS technologies. The model relies on the extraction of parasitic substrate network to simulate with circuit software parasitic lateral NPN bipolar transistors with multi-collector configuration. This allows to predict and analyze the injected substrate currents distribution through the chip and to explore different...
AlGaN/GaN nanowire omega-FinFETs have been fabricated and characterized. Tetramethylammonium hydroxide (TMAH) lateral wet etching and atomic layer deposited (ALD) HfO2 sidewall spacer result in very sharp vertical edges and fin widths from 200 nm down to 30 nm. Omega-gate structure exhibits excellent gate controllability and separates the channel from the underlying thick GaN buffer layer, which leads...
Nano-LEDs based on mesoscopic structures are the key elements for future low energy consumption optoelectronics as well as for secure, fast and efficient optical communication. We show first results using a novel device concept in which nano-LED emitters based on InGaN mesoscopic structures deposited by metalorganic vapor phase epitaxy (MOVPE) were implemented. The nano-LEDs were integrated in a high...
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